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| Datasheet File OCR Text: |
| geometry process details principal device types mpsa05 MPSA06 gross die per 4 inch wafer 23,048 process cp304v small signal transistor npn - high current transistor chip process epitaxial planar die size 22 x 22 mils die thickness 7.1 mils base bonding pad area 5.7 x 3.9 mils emitter bonding pad area 5.3 x 3.9 mils top side metalization al - 30,000? back side metalization au - 18,000? www.centralsemi.com r0 (30-august 2011)
process cp304v typical electrical characteristics www.centralsemi.com r0 (30-august 2011) |
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